| PART |
Description |
Maker |
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler
1.5GHz 10 Prescaler
1.5GHz ± 10 Prescaler
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| 5N20V |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
| KI1553DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
| AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
| ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB301 |
From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No
MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| SST4117 SST4118 SST4119 2N4117A 2N4118A 2N4118 2N4 |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-6.4A; On-Resistance, Rds(on):35mohm; Rds
(SST4117 - SST4119) N-Channel JFET General Purpose Amplifier
N-Channel JFET General Purpose Amplifier N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72
|
CALOGIC[Calogic, LLC]
Calogic LLC
Calogic LLC
|
| PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
